Neuromorphic Device with Low Power Consumption
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Figure 1: The role of RRAM devices in neuromorphic circuits: (a) scanning electron microscopy (SEM) image of an HfO2 1T1R RRAM device, in blue, integrated on 130–nm CMOS technology, with its selector transistor (width of 650 nm) in green; (b) basic building block of the proposed neuromorphic circuit; (c) cumulative density function of the conductance of a population of 16–Kb RRAM devices, as a function of the compliance current ICC, which effectively controls the conductance level; (d) measurement of the circuit in (a); (e) measurement of the circuit in (b). (Source: “
Neuromorphic object localization using resistive memories and ultrasonic transducers,” in Nature Communications)
While traditional processing techniques sample the detected signal continuously and perform calculations to extract useful information, the proposed
neuromorphic solution calculates asynchronously when useful information arrives, increasing the system’s energy efficiency by up to five orders of magnitude.