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BOB Bank of Brainchip
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The smaller you go the hotter you get.
IMEC and every other company INTEL included knows this and they all know what Brainchip can do at 28nm while remaining as cool as a cucumber in a fridge:
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By David Manners 12th December 2022
Imec has presented a Monte Carlo Boltzmann modeling framework that uses microscopic heat carrier distributions to predict 3D thermal transport in advanced RF devices intended for 5G and 6G wireless communication for the first time.
Case studies with GaN high-electron-mobility transistors (HEMTs) and InP heterojunction bipolar transistors (HBTs) revealed peak temperature rises that are up to three times larger than conventional predictions with bulk material properties.
Imec’s new tool will be very useful in guiding optimisations of next-gen RF devices toward thermally improved designs.
GaN- and InP-based devices have emerged as interesting candidates for 5G mm-wave and 6G sub-THz mobile front-end applications, respectively, due to their high output power and efficiency.
To optimize these devices for RF applications and make them cost-effective, much attention is paid to upscaling the III/V technologies to a Si platform and making them CMOS compatible.
However, with shrinking feature sizes and rising power levels, self-heating has become a major reliability concern, potentially limiting further RF device scaling.
“Tuning the design of GaN- and InP-based devices for optimal electrical performance often worsens thermal performance at high operating frequencies,” says Imec’s Nadine Collaert, “for GaN-on-Si devices, for example, we recently achieved tremendous progress in electrical performance, bringing the power-added efficiencies and output power for the first time on par with that of GaN-on-silicon carbide (SiC). But further enlarging device operating frequency will require downsizing the existing architectures. In these confined multilayer structures, however, thermal transport is no longer diffusive, challenging accurate self-heating predictions. Our novel simulation framework, yielding good matches with our GaN-on-Si thermal measurements, revealed peak temperature rises up to three times larger than previously predicted. It will provide guidance in optimizing these RF device layouts early in the development phase to ensure the right trade-off between electrical and thermal performance.”
Such guidance also proves very valuable for the novel InP HBTs, where imec’s modeling framework highlights the substantial impact non-diffusive transport has on self-heating in complex scaled architectures.
For these devices, nanoridge engineering (NRE) is an interesting heterogeneous integration approach from an electrical performance point of view.
“While the tapered ridge bottoms enable low defect density within the III-V materials, they, however, induce a thermal bottleneck for heat removal towards the substrate,” explains Imec’s Bjorn Vermeersch “iur 3D Monte Carlo simulations of NRE InP HBTs indicate that the ridge topology raises the thermal resistance by over 20 percent compared to a hypothetical monolithic mesa of the same height. Our analyses furthermore highlight the direct impact of the ridge material (e.g., InP vs. InGaAs) on self-heating, providing an additional knob to improve the designs thermally.”
IMEC and every other company INTEL included knows this and they all know what Brainchip can do at 28nm while remaining as cool as a cucumber in a fridge:
Home » News » Business
Add to Bookmarks
By David Manners 12th December 2022
Imec models 3D thermal transport in 5G/6G RF devices
Imec has presented a Monte Carlo Boltzmann modeling framework that uses microscopic heat carrier distributions to predict 3D thermal transport in advanced RF devices intended for 5G and 6G wireless communication for the first time.
Case studies with GaN high-electron-mobility transistors (HEMTs) and InP heterojunction bipolar transistors (HBTs) revealed peak temperature rises that are up to three times larger than conventional predictions with bulk material properties.
Imec’s new tool will be very useful in guiding optimisations of next-gen RF devices toward thermally improved designs.
GaN- and InP-based devices have emerged as interesting candidates for 5G mm-wave and 6G sub-THz mobile front-end applications, respectively, due to their high output power and efficiency.
To optimize these devices for RF applications and make them cost-effective, much attention is paid to upscaling the III/V technologies to a Si platform and making them CMOS compatible.
“Tuning the design of GaN- and InP-based devices for optimal electrical performance often worsens thermal performance at high operating frequencies,” says Imec’s Nadine Collaert, “for GaN-on-Si devices, for example, we recently achieved tremendous progress in electrical performance, bringing the power-added efficiencies and output power for the first time on par with that of GaN-on-silicon carbide (SiC). But further enlarging device operating frequency will require downsizing the existing architectures. In these confined multilayer structures, however, thermal transport is no longer diffusive, challenging accurate self-heating predictions. Our novel simulation framework, yielding good matches with our GaN-on-Si thermal measurements, revealed peak temperature rises up to three times larger than previously predicted. It will provide guidance in optimizing these RF device layouts early in the development phase to ensure the right trade-off between electrical and thermal performance.”
Such guidance also proves very valuable for the novel InP HBTs, where imec’s modeling framework highlights the substantial impact non-diffusive transport has on self-heating in complex scaled architectures.
For these devices, nanoridge engineering (NRE) is an interesting heterogeneous integration approach from an electrical performance point of view.
“While the tapered ridge bottoms enable low defect density within the III-V materials, they, however, induce a thermal bottleneck for heat removal towards the substrate,” explains Imec’s Bjorn Vermeersch “iur 3D Monte Carlo simulations of NRE InP HBTs indicate that the ridge topology raises the thermal resistance by over 20 percent compared to a hypothetical monolithic mesa of the same height. Our analyses furthermore highlight the direct impact of the ridge material (e.g., InP vs. InGaAs) on self-heating, providing an additional knob to improve the designs thermally.”
Dozzaman1977
Regular
I have not heard from Blind Freddie for a while ??
I wonder what Blind Freddie thinks of the Intel FS partnership?
I wonder what Blind Freddie thinks of the Intel FS partnership?
supersonic001
Regular
Wow ! in less than 24hrs followers on Linked In up from 7894 to 7944, thats big relatively speaking ! ....... spread the gospel people !!
HopalongPetrovski
I'm Spartacus!
Did we have some tallyman who was keeping track of Christmas 2022 price predictions?
From memory FF came closest last couple of years running?
Or was that just a ho'crapper sort o' thing?
Anyway my stab in the dark is $1.57 for 24 or 31 December 2022, whichever comes soonest and closest!
I'm innit to winnit!
Merry Christmas all you beautiful believers out there.
From memory FF came closest last couple of years running?
Or was that just a ho'crapper sort o' thing?
Anyway my stab in the dark is $1.57 for 24 or 31 December 2022, whichever comes soonest and closest!
I'm innit to winnit!
Merry Christmas all you beautiful believers out there.
Fact Finder
Top 20
I asked him if the INTEL announcement was significant and all he said was “Why did they give me such a stupid sighted person.” He then picked up his phone and dialled the local Mercedes Benz dealership to ask about the availability in Australia of the new limited edition Maybach and has not spoken to me since.I have not heard from Blind Freddie for a while ??
I wonder what Blind Freddie thinks of the Intel FS partnership?
100baggerdreams
Member
MF was immediate in churning out articles bashing BRN when its quarterly came out and SP plunged, but nary a word into today about its significant partnership (and therefore validation) with Intel
alwaysgreen
Top 20
Did we have some tallyman who was keeping track of Christmas 2022 price predictions?
From memory FF came closest last couple of years running?
Or was that just a ho'crapper sort o' thing?
Anyway my stab in the dark is $1.57 for 24 or 31 December 2022, whichever comes soonest and closest!
I'm innit to winnit!
Merry Christmas all you beautiful believers out there.
I'm making my prediction on just before open on the 31st
FabricatedLunacy
Regular
...somehow you sound surprised
FrederikSchack
Regular
Yes, not in production, but got a million USD preorders... So, there's something there.
HopalongPetrovski
I'm Spartacus!
I'm making my prediction on just before open on the 31st
TasTroy77
Founding Member
Did we have some tallyman who was keeping track of Christmas 2022 price predictions?
From memory FF came closest last couple of years running?
Or was that just a ho'crapper sort o' thing?
Anyway my stab in the dark is $1.57 for 24 or 31 December 2022, whichever comes soonest and closest!
I'm innit to winnit!
Merry Christmas all you beautiful believers out there.
I would be very happy with 1.57 at the end of the year but might need a decent announcement.
Space Cadet
Regular
Evermont
Stealth Mode
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