Fullmoonfever
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I see mid last year that Renesas developed some additional tech for 22nm.
Wonder if AKD1500 can integrate here as well given Renesas comments on the dev need?
Renesas Develops Circuit Technologies for 22-nm Embedded STT-MRAM with Faster Read and Write Performance for MCUs in IoT Applications
TOKYO, Japan ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced that it has developed circuit technologies for an embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM, hereinafter MRAM) test chip with fast read and write operations fabricated using a 22-nm process. The test chip includes a 32-megabit (Mbit) embedded MRAM memory cell array and achieves 5.9-nanosecond (ns) random read access at a maximum junction temperature of 150°C, and a write throughput of 5.8-megabyte-per-second (MB/s).
Renesas presented these achievements on June 16 at the 2022 IEEE Symposium on VLSI Technology and Circuits, held between June 12 and 17 in Hawaii.
As the advances of IoT and AI technologies continue, microcontroller units (MCUs) used in endpoint devices are expected to deliver higher performance than ever, and therefore need to be fabricated with finer process nodes. MRAM fabricated in BEOL (Note 1) is advantageous compared to flash memory fabricated in FEOL (Note 2) for sub-22 nm processes because it is compatible with existing CMOS logic process technology and requires fewer additional mask layers. However, MRAM has a smaller read margin than flash memory, which degrades read speed. A large gap between the CPU operating frequency and the read frequency of the non-volatile memory is also a challenge since it can degrade MCU performance.
Wonder if AKD1500 can integrate here as well given Renesas comments on the dev need?
Renesas Develops Circuit Technologies for 22-nm Embedded STT-MRAM with Faster Read and Write Performance for MCUs in IoT Applications
TOKYO, Japan ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced that it has developed circuit technologies for an embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM, hereinafter MRAM) test chip with fast read and write operations fabricated using a 22-nm process. The test chip includes a 32-megabit (Mbit) embedded MRAM memory cell array and achieves 5.9-nanosecond (ns) random read access at a maximum junction temperature of 150°C, and a write throughput of 5.8-megabyte-per-second (MB/s).
Renesas presented these achievements on June 16 at the 2022 IEEE Symposium on VLSI Technology and Circuits, held between June 12 and 17 in Hawaii.
As the advances of IoT and AI technologies continue, microcontroller units (MCUs) used in endpoint devices are expected to deliver higher performance than ever, and therefore need to be fabricated with finer process nodes. MRAM fabricated in BEOL (Note 1) is advantageous compared to flash memory fabricated in FEOL (Note 2) for sub-22 nm processes because it is compatible with existing CMOS logic process technology and requires fewer additional mask layers. However, MRAM has a smaller read margin than flash memory, which degrades read speed. A large gap between the CPU operating frequency and the read frequency of the non-volatile memory is also a challenge since it can degrade MCU performance.