Hi Aaron,For me that implies that he believes they are going to overtake us and be the new leader?!
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Website does not give a lot of information, and looks like a new company
CyberSwarm – Techonolgy
Neuromorphic Computing - unlike traditional computers, where data storage and processing are separate, neuromorphic computing integrates these elements, just like our brains integrate memory and processing. This means no more running back and forth, leading to faster and more energy-efficient...www.cyber-swarm.net
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CyberSwarm are a Romanian company.
Their web description of their technology is couched in future tense.
They use phase-change MemRistors.
Their earliest patent dates from 2017. On interesting feature is that their circuits are transparent, which means they have the potential to be overlaid on a display, but I'm not sure why you'd want to have your processor circuitry exposed like that, but then, I was born in the last millennium.
US2023360701A1 PROGRAMMABLE RESISTIVE MEMORY ELEMENT AND A METHOD OF MAKING THE SAME
20180611
A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.
[0002] Programmable resistive memory elements can store information as different resistance states. For increasing memory density and data capacity, it is highly desirable to have a programmable memory with multiple resistance states. Programmable resistive memory elements with multiple resistance states can be used in many applications like nonvolatile solid state memories, programmable logic, pattern recognition, etc.
US11386953B2 Multiple memory states device and method of making same 20181023
A phase-change material based resistive memory contains a resistive layer and two electrical contacts. After fabrication the memory is subjected to thermal treatment which initiates a transition toward a crystalline state favoring in this way the subsequent obtaining of a large number of resistive memory states.
EP3584749A1 SYNAPSE ARRAY 20180611
A synapse crossbar array device is provided. The synapse crossbar array device includes a plurality of Indium-Gallium-Zinc-Oxide (IGZO) thin film transistors (TFTs) and a plurality of IGZO resistive synapses. Each IGZO resistive synapse includes a IGZO resistive layer, a first electrical contact electrically coupled to one of the plurality of IGZO TFTs and a second electrical contact electrically connected to one of a plurality of column connection lines. The first electrical contact and the second electrical contact of each IGZO resistive synapse are disposed on the IGZO resistive layer of the resistive synapse. The synapse crossbar array device includes IGZO resistive synapses that have, each of them, an established resistance value. The synapse crossbar array may be fully transparent and may be integrated into the displays with which portable devices are provided
