SiDEvans
Regular
Here’s one for the diary. Not to be missed.
https://us06web.zoom.us/webinar/register/WN_ieaIY14tQ6G0xMP1HBipLg
BRN Discussion Ongoing
- Thread starter TechGirl
- Start date
Here’s one for the diary. Not to be missed.
https://us06web.zoom.us/webinar/register/WN_ieaIY14tQ6G0xMP1HBipLg
equanimous
Norse clairvoyant shapeshifter goddess
When I look on twitter there are a ALOT of other organisations retweeting Edge Impulse and Brainchip announcements...
Sirod69
bavarian girl ;-)
it always warms my heart
To underline real-world intent, Mercedes vows that the EQXX’s power train will reach showrooms by 2024. An initial showroom model, and surely more to come, will be built on the company’s new Mercedes Modular Architecture platform, designed for smaller “entry-luxury” models such as the A-Class and the CLA Coupe. While Mercedes was refining its one-off tech showpiece, it even used a current EQB model as a test mule for the power train.
If that electric math still seems esoteric, the England-bound Benz delivered the equivalent of 262 miles per gallon, nearly double the 141 mpg of the industry-leading Tesla Model 3 Standard Range.
spectrum.ieee.org
To underline real-world intent, Mercedes vows that the EQXX’s power train will reach showrooms by 2024. An initial showroom model, and surely more to come, will be built on the company’s new Mercedes Modular Architecture platform, designed for smaller “entry-luxury” models such as the A-Class and the CLA Coupe. While Mercedes was refining its one-off tech showpiece, it even used a current EQB model as a test mule for the power train.
If that electric math still seems esoteric, the England-bound Benz delivered the equivalent of 262 miles per gallon, nearly double the 141 mpg of the industry-leading Tesla Model 3 Standard Range.
New EV Prototype Leaves Range Anxiety in the Dust
Mercedes-Benz's Vision EQXX completed a record-breaking 747-mile run in May
spectrum.ieee.org
equanimous
Norse clairvoyant shapeshifter goddess
The reason for my question mark was the following statement:
Neuromorphic object localization using resistive memories and ultrasonic transducers
https://www.eetimes.com/neuromorphic-device-with-low-power-consumption/ => https://www.nature.com/articles/s41467-022-31157-y.pdf
BRN - WBT and Edge Impulse?
I am an absolute beginner as far as ReRAM is concerned. As much as I would have liked it to be true that BRN, WBT and Edge Impulse somehow work together this cannot be deduced from this technical article. First, I checked the authors to see if there was any overlap. There are not. Then I took a closer look at the ~Latin - which reads like this to me. There a few clear sentences stand out:
"Two different fabricated RRAM circuits are used in this article. The first is a 16,384 (16k) device array (128 × 128 devices) of one-transistor/one-resistor, 1T1R, structures. The second chip is the neuromorphic platform presented in Fig. 4a. The RRAM cell consists of HfO2 5-nm-thick film sandwiched in a TiN/HfO2/Ti/TiN stack. The RRAM stack is integrated into the back end Of Line (BEOL) of a standard 130 nm CMOS process"
I would exclude the first (1T1R) one via this text passage:
"The 1T1R (one transistor one resistor) architecture used in embedded ReRAM arrays is not sufficient to support the large arrays of memory cells needed in discrete memory chips. For this reason, Weebit’s crossbar arrays were developed using a 1S1R (one selector one resistor) architecture that enables the high density needed for discrete chips. Such an architecture also allows..."
https://embeddedcomputing.com/techn...-demonstrates-its-first-crossbar-reram-arrays
I would exclude the second (HfO2) one via this text passage:
"Most ReRAM designs utilise a special phase-changing material (such as HfO2) controlled using a standard NMOS transistor. When a high current is passed through the resistive material, its resistance changes and the material's resistance is also dependent on the direction of the current. Therefore, when the bit is read, a small gate voltage is applied to the transistor which allows current to flow through the phase-changing material, and the current that results determine the state of the bit.
Weebit Nano is an Israeli company formed in 2015 to develop ReRAM for next-generation computing systems. The growing need for non-volatile memory in computing systems that allows for unlimited read and write cycles presents ReRAM a real opportunity to become an established memory technology.
Unlike most other ReRAM technologies, Weebit Nano has focused on using Silicon Oxide as their phase-changing material."
https://www.electropages.com/blog/2021/05/weebitnano-patent-and-what-reram
View attachment 13845
The only consolation is that Edge Impulse with WBT ReRAM would get the better results in any case if I summarize it correctly. They made a conscious decision not to use either manufacturing process. Maybe Weebit should give EI a call.
So I assume that this time it is not yet so far. But as already mentioned, my conclusion is based on my naivety. I only looked for a clear logical connection and found this contradiction. So I can be wrong. @Slymeat please correct me if you see it differently.
CEA–Leti has made significant developments in pMUT sensors and spiking neural networks based on RRAM technology during the last decade. “We would like to thank the H2020 MeM–Scales project [871371] that partially funded the work,” Vianello said.
Thank you Diogenes
Sirod69
bavarian girl ;-)
I find this article very interesting. I found it because Tim LIewellynn (Nviso) liked it
Keith Kressin • 2.CEO – MemryX
Keith Kressin worked about 15 years at Qualcomm, you all know I allways search about a connection to BRN.
He is in connection with Arm people.
MemryX “MX3” offers simple, scalable edge AI for multiple industries
MemryX Inc., a pioneering start-up that designs breakthrough silicon for artificial intelligence (AI) processing for edge devices, announced today it has begun customer sampling of its revolutionary MX3 AI Accelerator.
Keith Kressin • 2.CEO – MemryX
Keith Kressin worked about 15 years at Qualcomm, you all know I allways search about a connection to BRN.
He is in connection with Arm people.
MemryX “MX3” offers simple, scalable edge AI for multiple industries
MemryX Inc., a pioneering start-up that designs breakthrough silicon for artificial intelligence (AI) processing for edge devices, announced today it has begun customer sampling of its revolutionary MX3 AI Accelerator.
MemryX Begins Customer Sampling of AI Accelerator Chip
MemryX Inc. announced today it has begun customer sampling of its revolutionary MX3 AI Accelerator with 1-click compiler.
www.businesswire.com
buena suerte :-)
BOB Bank of Brainchip
Just saw that.... WOW haven't seen that kind of positive indicative for a LOOOOONG time .... lets hope it stays there!!
Slymeat
Move on, nothing to see.
Well done @cosors, this is an interesting find and you do seem to be gaining a good understanding of ReRAM. I agree that EI should give Weebit a call, or vice versa, Weebit’s rechnology of sandwitching SiOx between two TiN layers has been proven to work and integrates very well with standard CMOS. The massive advantage is that is is simple for fabs to work with and importantly requires no exotic materials.
Neuromorphic object localization using resistive memories and ultrasonic transducers
https://www.eetimes.com/neuromorphic-device-with-low-power-consumption/ => https://www.nature.com/articles/s41467-022-31157-y.pdf
BRN - WBT and Edge Impulse?
I am an absolute beginner as far as ReRAM is concerned. As much as I would have liked it to be true that BRN, WBT and Edge Impulse somehow work together this cannot be deduced from this technical article. First, I checked the authors to see if there was any overlap. There are not. Then I took a closer look at the ~Latin - which reads like this to me. There a few clear sentences stand out:
"Two different fabricated RRAM circuits are used in this article. The first is a 16,384 (16k) device array (128 × 128 devices) of one-transistor/one-resistor, 1T1R, structures. The second chip is the neuromorphic platform presented in Fig. 4a. The RRAM cell consists of HfO2 5-nm-thick film sandwiched in a TiN/HfO2/Ti/TiN stack. The RRAM stack is integrated into the back end Of Line (BEOL) of a standard 130 nm CMOS process"
I would exclude the first (1T1R) one via this text passage:
"The 1T1R (one transistor one resistor) architecture used in embedded ReRAM arrays is not sufficient to support the large arrays of memory cells needed in discrete memory chips. For this reason, Weebit’s crossbar arrays were developed using a 1S1R (one selector one resistor) architecture that enables the high density needed for discrete chips. Such an architecture also allows..."
https://embeddedcomputing.com/techn...-demonstrates-its-first-crossbar-reram-arrays
I would exclude the second (HfO2) one via this text passage:
"Most ReRAM designs utilise a special phase-changing material (such as HfO2) controlled using a standard NMOS transistor. When a high current is passed through the resistive material, its resistance changes and the material's resistance is also dependent on the direction of the current. Therefore, when the bit is read, a small gate voltage is applied to the transistor which allows current to flow through the phase-changing material, and the current that results determine the state of the bit.
Weebit Nano is an Israeli company formed in 2015 to develop ReRAM for next-generation computing systems. The growing need for non-volatile memory in computing systems that allows for unlimited read and write cycles presents ReRAM a real opportunity to become an established memory technology.
Unlike most other ReRAM technologies, Weebit Nano has focused on using Silicon Oxide as their phase-changing material."
https://www.electropages.com/blog/2021/05/weebitnano-patent-and-what-reram
View attachment 13845
The only consolation is that Edge Impulse with WBT ReRAM would get the better results in any case if I summarize it correctly. They made a conscious decision not to use either manufacturing process. Maybe Weebit should give EI a call.
So I assume that this time it is not yet so far. But as already mentioned, my conclusion is based on my naivety. I only looked for a clear logical connection and found this contradiction. So I can be wrong. @Slymeat please correct me if you see it differently.
And you know that I do love it that people are thinking about neuromorphic computing and ReRAM in the same breath. The two technologies do seem to marry together so well. I look forward to future solutions that employ Akida for the crux of the processing, supported be ReRAM (with Weebit being my pick of the bunch) for both persistent storage and data pre-processing.
If 4DS solve their current issues, their ReRAM can also be employed as an energy store - something akin to a back-up battery. But I’d prefer Strategic Elements printable, self-charging battery to be the main power source at the edge. It WILL happen! And then the edge will be truly far, and completely isolated. Just sensors doing their jobs and reporting as necessary.
But as with everything, that’s just my opinion.
Izzzzzzzzzzy
Regular
Semi conductor index is up over 4% brn indicative price up as well
uiux
Regular
Hats of to this bloke, he seems to really know his stuff - even if he is smoking a spliff! He got a lot of "likes" too.
View attachment 13857
View attachment 13859
Taking a leaf out of @SERA2g book
"He sounds like a fucking idiot"
But in all serious, isn't it a bit embarrassing commiting to the idea without any factual basis?
What impact does this have on the BrainChip brand?
uiux
Regular
I have no idea how to word any of my opinions gracefully so please don't execute me
And I'm def not saying we are 100% not in that project - just we don't know
Xhosa12345
Regular
someone took a massive bite just now, about a million buks worth, boosted us up from 5 to 7%
Bravo
If ARM was an arm, BRN would be its biceps💪!
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